中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 品牌 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V | 封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|
| SSC8166GN2 | AF | Single N | 60 | 7 | 1.5 | 32 | ±20 | DFN2020-6L | |||
| SSC8166GN4 | AF | Single N | 60 | 22 | 1.6 | 31 | ±20 | PDFN3.3X3.3-8L | |||
| SSC8L60GN6 | AF | Single N | 60 | 100 | 2 | 3.4 | ±20 | PDFN5X6 | |||
| SSC8L60PN6 | AF | Single N | 60 | 160 | 2 | 1.9 | ±20 | PDFN5X6-8L | |||
| SSC8L60GT8 | AF | Single N | 60 | 120 | 2 | 3 | ±20 | TO-252-2L | |||
| SSC8L62GN6 | AF | Single N | 60 | 60 | 1.8 | 8 | ±20 | PDFN5X6 | |||
| SSC8L62GT8 | AF | Single N | 60 | 70 | 1.8 | 8 | ±20 | TO252-2L | |||
| SSC8L620GT8 | AF | Single N | 60 | 134 | 1.6 | 3.9 | ±20 | TO252-2L | |||
| SSC8L62GS3 | AF | Single N | 60 | 59 | 1.8 | 9.2 | ±20 | SOT-89-3L | |||
| SSC8L64GN6 | AF | Single N | 60 | 90 | 1.9 | 4.4 | ±20 | PDFN5X6 | |||
| SSC8L612PN6 | AF | Single N | 60 | 160 | 3 | 2.2 | ±20 | PDFN5X6-8L | |||
| SSC8L610GN6 | AF | Single N | 60 | 68 | 1 | 6.7 | ±20 | PDFN5X6-8L | |||
| SSCU9N60GN6 | AF | Single N | 60 | 50 | 1.0-2.5 | 8.9 | ±20 | PDFN5X6 | |||
| SSC8L610GN4 | AF | Single N | 60 | 58 | 1.6 | 7.2 | ±20 | PDFN3.3X3.3-8L | |||
| SSC8L614GT4 | AF | Single N | 60 | 180 | 3 | 2.6 | ±20 | TO-220-3L | |||
| SSC8161GS6A | AF | Single P | -60 | -4 | -1.6 | 90 | ±20 | SOT-23-3L | |||
| SSC8167GS6A | AF | Single P | -60 | -5 | -1.6 | 63 | ±20 | SOT-23-3L | |||
| SSC8169GS6 | AF | Single P | -60 | -2.1 | -2 | 155 | ±20 | SOT-23 | |||
| SSC8L61GS1 | AF | Single P | -60 | -30 | -1.8 | 18 | ±20 | SOP-8 | |||
| SSC8L61GN4 | AF | Single P | -60 | -37 | -1.6 | 19 | ±20 | PDFN3.3X3.3-8L |