中压MOSFET(Medium-voltage MOSFET)在电压和电流能力之间取得了平衡,是工业应用中最常见的类型。漏源电压(Vds)通常为200V, 300V, 400V, 500V, 600V。超结技术是其革命性的进步,它通过在传统的漂移区中插入P型柱,实现了比传统平面结构更低的导通电阻和更快的开关速度。
| 型号 | 品牌 | 类型 | VDS_Max/V | ID_Max /A | VGS(th)Typ/V | RDS(ON)Typ (mΩ)@VGS 10V | RDS(ON)Max (mΩ)@VGS 10V | RDS(ON)Typ (mΩ)@VGS 4.5V | RDS(ON)Max (mΩ)@VGS 4.5V | VGS_Max/V | 封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|
| SSC139GN1 | AF | Single P | -50 | -0.4 | -1.4 | ±20 | DFN1006-3L | ||||
| SSC8151GS6 | AF | Single P | -50 | -0.1 | -1.6 | 4.5 | ±20 | SOT-23 | |||
| SSC8064GS6 | AF | Single N | 60 | 3 | 1.4 | 76 | ±20 | SOT-23 | |||
| SSC8160GS6 | AF | Single N+ESD | 60 | 0.3 | 1.5 | 2000 | ±20 | SOT-23 | |||
| SSC8162GS6 | AF | Single N+ESD | 60 | 0.3 | 1 | 1100 | ±12 | SOT-23 | |||
| SSC8164GS6 | AF | Single N+ESD | 60 | 0.5 | 1 | 1100 | ±20 | SOT-23 | |||
| SSC8164GS7 | AF | Single N+ESD | 60 | 0.44 | 0.95 | 1100 | ±20 | SOT-323 | |||
| SSC8164GS8 | AF | Single N+ESD | 60 | 0.4 | 1 | 1000 | ±20 | SOT-523 | |||
| SSC8164GS9 | AF | Single N+ESD | 60 | 0.3 | 1 | 1000 | ±20 | SOT-723 | |||
| SSC7002EGS6 | AF | Single N+ESD | 60 | 0.3 | 1.5 | 2000 | ±20 | SOT-23 | |||
| SSC7002EGN1 | AF | Single N+ESD | 60 | 0.35 | 1.6 | 1600 | ±20 | DFN1006 | |||
| SSC7002KGS6 | AF | Single N+ESD | 60 | 0.3 | 1.5 | 2000 | ±20 | SOT-23 | |||
| SSC7002KGS7 | AF | Single N+ESD | 60 | 0.3 | 1.5 | 2000 | ±20 | SOT-323 | |||
| SSC7002KGS8 | AF | Single N+ESD | 60 | 0.3 | 1.5 | 2000 | ±20 | SOT-523 | |||
| SSC8066GN4 | AF | Single N | 60 | 36 | 1.9 | 13 | ±20 | PDFN3.3X3.3-8L | |||
| SSC8066GN6 | AF | Single N | 60 | 42 | 1.5 | 13 | ±20 | PDFN5X6-8L | |||
| SSC8066GT8 | AF | Single N | 60 | 58 | 1.6 | 12 | ±20 | TO252-2L | |||
| SSC8068GN4 | AF | Single N | 60 | 25 | 1.5 | 24 | ±20 | PDFN3.3X3.3-8L | |||
| SSC8068GN6 | AF | Single N | 60 | 30 | 1.5 | 23 | ±20 | PDFN5X6-8L | |||
| SSC8068GT8 | AF | Single N | 60 | 32 | 1.7 | 29 | ±20 | TO-252-2L |