JMSH0401ATLQ规格参数 |
|||
|---|---|---|---|
| Type | 汽车MOSFET | ||
| RoHS | |||
| 制造商 | JJM | ||
| 类型 | N | ||
| VDS_Max/V | 40 | ||
| ID_Max /A | 337 | ||
| VGS(th)Typ/V | 2.8 | ||
| RDS(ON)Typ (mΩ)@ VGS 10V | 1 | ||
| RDS(ON)Max (mΩ)@ VGS 10V | 1.25 | ||
| VGS_Max/V | ±20 | ||
JMSH0401ATLQ详情
车规级MOSFET
JMSH0401ATLQ特点
- 超低导通电阻,
- 低栅极电荷,
- 100% UIS和测试
- 无铅铅电镀
- 无卤素且符合 RoHS 标准
- 符合 AEC-Q101 标准,适用于汽车应用
JMSH0401ATLQ产品概要
| Parameter | Value | Unit |
| VDS | 40 | V |
| VGS(th)_Typ | 2.8 | V |
| ID (@ VGS=10V) (2) | 337 | A |
| RDS(ON)_Typ (@ VGS=10V) | 1.0 | mΩ |

PowerJE®10x12 Top

PowerJE®10x12 Bottom

JMSH0401ATLQ订购信息
| Device | Package | # of Pins | Marking | MSL | TJ(°C) | Media | Quantity (pcs) |
| JMSH0401ATLQ-13 | PowerJE®10x12 (1) | 8 | SH0401A | 1 | -55 to 175 | 13-inch Reel | 2000 |
Note 1: PowerJE® is a registered trademark of JieJie Micro., its package outline is compatible to that of TO-LeadLess (TOLL).
Absolute Maximum Ratings (@ unless otherwise specified)
| Parameter | Symbol | Value | Unit | |
| Drain-to-Source Voltage | VDS | 40 | V | |
| Gate-to-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (2) | TC=25°C | ID | 337 | A |
| TC=100°C | 238 | |||
| Pulsed Drain Current (4) | IDM | 1349 | A | |
| Avalanche Current (5) | IAS | 46 | A | |
| Avalanche Energy (5) | EAS | 317 | mJ | |
| Power Dissipation (6) | TC=25°C | PD | 300 | W |
| TC=100°C | 150 | |||
| Junction & Storage Temperature Range | TJ, TSTG | -55 to 175 | °C | |

vs.

Gate Charge
JMSH0401ATLQ电气特性
(@ unless otherwise specified)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | |
| STATIC PARAMETERS | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | ID=250μA, VGS=0V | 40 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=32V, VGS=0V | 1.0 | μA | |||
| TJ=55°C | 5.0 | ||||||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250μA | 2.2 | 2.8 | 3.4 | V | |
| Static Drain-Source ON-Resistance | RDS(ON) | VGS=10V, ID=20A | 1.0 | 1.25 | mΩ | ||
| Forward Transconductance | gFS | VDS=5V, ID=20A | 95 | S | |||
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | 0.65 | 1.0 | V | ||
| Diode Continuous Current | IS | TC=25°C | 337 | A | |||
动态参数 (7)
| Input Capacitance | Ciss | VGS=0V, VDS=20V, f = 1MHz | 5280 | 7128 | pF | |
| Output Capacitance | Coss | 3405 | 4597 | pF | ||
| Reverse Transfer Capacitance | Crss | 71 | 142 | pF | ||
| Gate Resistance | Rg | VGS=0V, VDS=0V, f = 1MHz | 1.9 | Ω |
开关参数 (7)
| Total Gate Charge (@ VGS=10V) | Qg | VGS=0 to 10V VDS=20V, ID=20A | 68 | 92 | nC | |
| Total Gate Charge (@ VGS=6.0V) | Qg | 43 | 58 | nC | ||
| Gate Source Charge | Qgs | 21 | 28 | nC | ||
| Gate Drain Charge | Qgd | 13.4 | 27 | nC | ||
| Turn-On DelayTime | tD(on) | VGS=10V, VDS=20V RL=1.0Ω, RGEN=6Ω | 27 | ns | ||
| Turn-On Rise Time | tr | 88 | ns | |||
| Turn-Off DelayTime | tD(off) | 68 | ns | |||
| Turn-Off Fall Time | tf | 90 | ns | |||
| Body Diode Reverse Recovery Time | trr | IF=20A, dIF/dt=100A/μs | 70 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=20A, dIF/dt=100A/μs | 89 | nC |
热性能
| Parameter | Symbol | Typ. | Max. | Unit |
| Thermal Resistance, Junction-to-Ambient | RθJA | 45 | 55 | °C/W |
| Thermal Resistance, Junction-to-Case | RθJC | 0.50 | 0.65 | °C/W |
备注
- 计算的连续电流假设条件为而实际连续电流取决于热和 机电应用板设计。
- 连续额定电流受所用封装的限制。
- 该单脉冲测量是在.
- 该单脉冲测量是在以下情况下进行的 条件而其值受
- 功耗基于.
- 此值由设计保证,因此不包含在 生产测试。
JMSH0401ATLQ典型电气和热性能

Figure 1: Saturation Characteristics

Figure 2: Transfer Characteristics

Figure 3: vs. Drain Current

Figure 4: vs. Junction Temperature

Figure 5: vs. Junction Temperature

Figure 6: vs. Junction Temperature

Typical Electrical & Thermal Characteristics
Figure 7: Body-Diode Characteristics

Figure 8: Capacitance Characteristics

Figure 9: Current De-rating

Figure 10: Power De-rating

Figure 11: Single Pulse Power Rating, Junction-to-Case

Figure 12: Maximum Safe Operating Area

Figure 13: Normalized Maximum Transient Thermal Impedance
PowerJE®10x12 Package Information
Package Outlines

Top View

Side View

Bottom View

Front View
备注
- 尺寸和公差符合 ASME Y14.5M,1994 。
- 所有尺寸均以毫米为单位。
- 尺寸不包括毛刺或模具飞边。模具飞边不超过.
| DIM. | MILLIMETER | ||
| MIN. | NOM. | MAX. | |
| A | 2.20 | 2.30 | 2.40 |
| b | 0.70 | 0.80 | 0.90 |
| b1 | 9.70 | 9.80 | 9.90 |
| b2 | 0.42 | 0.46 | 0.50 |
| c | 0.40 | 0.50 | 0.60 |
| D | 10.28 | 10.38 | 10.58 |
| D2 | 3.30 | ||
| E | 9.70 | 9.90 | 10.10 |
| E1 | 7.80 | ||
| E4 | 8.80 | ||
| E5 | 9.20 | ||
| e | 1.20 (BSC) | ||
| H | 11.48 | 11.68 | 11.88 |
| H1 | 6.55 | 6.75 | 6.85 |
| H2 | 7.30 | ||
| H3 | 3.20 | ||
| H4 | 3.80 | ||
| K1 | 4.18 | ||
| L | 1.70 | 1.90 | 2.10 |
| L1 | 0.70 | ||
| L2 | 0.60 | ||
| L4 | 1.00 | 1.15 | 1.30 |
Recommended Soldering Footprint

DIMENSIONS:MILLIMETERS