JMSH0403PGHW详情

40伏，131安，3.0毫欧 半桥N沟道功率屏蔽栅沟槽MOSFET JMSH0403PGHW

JMSH0403PGHW特色

• 非常好$R_{\mathrm{D}\mathrm{S}\mathrm{(}\mathrm{或者}\mathrm{N}\mathrm{)}}$以及低栅极电荷
• 100%通过UIS测试
• 检测率为100%的ΔVds
• 无卤素;符合RoHS

JMSH0403PGHW应用

• 负载开关
• PWM应用
• 电源管理

Top View

Bottom View

PDFN5X6-8L-HW

Product Summary

Parameters	Value	Unit
VDSS	40	V
VGS(th)_Typ	3.1	V
ID(@VGS=10V)	131	A
RDS(ON)_Typ(@VGS=10V)	3.0	mΩ

RoHS

Pin Assignment

Schematic Diagram

JMSH0403PGHW订购信息

Device	Marking	MSL	Form	Package	Reel(pcs)	Per Carton (pcs)
JMSH0403PGHW-13	H0403PH	1	Tape&Reel	PDFN5x6-8L-HW	5000	50000

Absolute Maximum Ratings (@ ${\mathrm{T}}_{\mathrm{C}}={25}^{\circ }\mathrm{C}$ unless otherwise specified)

Symbol	Parameter		Value	Unit
VDS	Drain-to-Source Voltage		40	V
VGS	Gate-to-Source Voltage		±20	V
ID	Continuous Drain Current	TC=25°C	131	A
		TC=100°C	83
IDM	Pulsed Drain Current (1)		Refer to Fig.4	A
EAS	Single Pulsed Avalanche Energy (2)		238	mJ
PD	Power Dissipation	TC=25°C	104	W
		TC=100°C	42
TJ, TSTG	Junction & Storage Temperature Range		-55 to 150	°C

Thermal Characteristics

Symbol	Parameter	Max	Unit
RθJA	Thermal Resistance, Junction to Ambient(3)	44	°C/W
RθJC	Thermal Resistance, Junction to Case	1.2

Electrical Characteristics $(T_{\mathrm{J}}={25}^{\circ }\mathrm{C}$ unless otherwise specified)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Off Characteristics
V(BR)DSS	Drain-Source Breakdown Voltage	ID=250μA, VGS=0V	40	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS=32V, VGS=0V	-	-	1.0	μA
IGSS	Gate-Body Leakage Current	VDS=0V, VGS=±20V	-	-	±100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS=VGS, ID=250μA	2.1	3.1	4.0	V
RDS(ON)	Static Drain-Source ON-Resistance(4)	VGS=10V, ID=20A	-	3.0	3.6	mΩ
Dynamic Characteristics
Rg	Gate Resistance	f=1MHz	-	0.8	-	Ω
Ciss	Input Capacitance	VGS=0V, VDS=20V, f=1MHz	1412	1976	2668	pF
Coss	Output Capacitance		856	1198	1618	pF
Crss	Reverse Transfer Capacitance		79	110	149	pF
Qg	Total Gate Charge	VGS=0 to 10VVDS=20V, ID=20A	24	33	45	nC
Qgs	Gate Source Charge		-	10	-	nC
Qgd	Gate Drain("Miller") Charge		-	10	-	nC
Switching Characteristics
td(on)	Turn-On DelayTime	VGS=10V, VDD=20VID=20A, RGEN=3Ω	-	13	-	ns
tr	Turn-On Rise Time		-	24	-	ns
td(off)	Turn-Off DelayTime		-	22	-	ns
tf	Turn-Off Fall Time		-	9	-	ns
Body Diode Characteristics
IS	Maximum Continuous Body Diode Forward Current		-	-	131	A
ISM	Maximum Pulsed Body Diode Forward Current		-	-	522	A
VSD	Body Diode Forward Voltage	VGS=0V, IS=20A	-		1.2	V
trr	Body Diode Reverse Recovery Time	IF=20A, di/dt=100A/us	29	40	55	ns
Qrr	Body Diode Reverse Recovery Charge		-	37	-	nC

Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.

2. $E_{AS}$ condition: Starting $T_J=25C$ , $V_{DD}=20V$ , $V_{GS}=10V$ , $R_G=25ohm$ , $L=3mH$ , $I_{AS}=12.6A$ , $V_{DD}=0V$ during time in avalanche.

3. $R_{\theta JA}$ is measured with the device mounted on a 1inch² pad of 2oz copper FR4 PCB.

4. Pulse Test: Pulse Width $\le 300\mu s$ Duty Cycle $\le 0.5\%$

JMSH0403PGHW Typical Performance Characteristics

Figure 1: Power De-rating

Figure 2: Current De-rating

Figure 3: Normalized Maximum Transient Thermal Impedance

Figure 4: Peak Current Capacity

Figure 5: Output Characteristics

Figure 6: Typical Transfer Characteristics

Figure 7: On-resistance vs. Drain Current

Figure 8: Body Diode Characteristics

Figure 9: Gate Charge Characteristics

Figure 10: Capacitance Characteristics

Figure 11: Normalized Breakdown voltage vs. Junction Temperature

Figure 12: Normalized on Resistance vs. Junction Temperature

Figure 13: Normalized Threshold Voltage vs. Junction Temperature

Figure 14: $R_{\mathrm{\text{DS(ON)}}}$ vs. $V_{\mathrm{\text{GS}}}$

Figure 15: Maximum Safe Operating Area

JMSH0403PGHW Test Circuit

Figure 1: Gate Charge Test Circuit & Waveform

Figure 2: Resistive Switching Test Circuit & Waveform

Figure 3: Unclamped Inductive Switching Test Circuit& Waveform

Figure 4: Diode Recovery Test Circuit & Waveform

JMSH0403PGHW Package Mechanical Data(PDFN5X6-8L-HW)

Package Outline

Top View

Side View

Bottom View

Front View

NOTES:

1. Dimension and tolerance per ASME Y14.5M, 1994.

2. All dimensions in millimeter (angle in degree).

3. Dimensions D1 and E1 do not include mold flash protrusions or gate burrs.

DIM	MILLMETER
	MIN.	NOM.	MAX.
A	0.90	1.00	1.15
A1	0.00	-	0.10
b	0.31	0.41	0.51
b1	0.15	0.25	0.35
c	0.24	0.32	0.40
DIM	4.95	5.05	5.15
D1	4.00	4.10	4.20
D2	0.50	0.60	0.70
E	6.05	6.15	6.25
E1	5.50	5.60	5.70
E2	3.31	3.41	3.51
e	1.27BSC
H	0.60	0.70	0.80
L	0.50	0.70	0.80
L1	-	-	0.13
a	-	-	12°

Recommended Soldering Footprint

DIMENSIONS:MILLIMETERS