JJM JMSH0403PG|JMSH0403PG规格书|JMSH0403PG参数-中压MOSFET-MOSFET-深圳维佰益科技有限公司

JMSH0403PG详情

40伏，135安培，2.6mΩ N通道功率SGT MOSFET JMSH0403PG

JMSH0403PG特点

非常好 $R_{D S (O N)}$ 低栅极电荷，
100%UIS测试，
100%ΔVds测试
无卤素;符合RoHS

JMSH0403PG应用

负载开关
PWM应用
电源管理

JMSH0403PG正面图
Top View

JMSH0403PG背面图
Bottom View
PDFN5X6-8L

产品摘要

Parameters	Value	Unit
VDSS	40	V
VGS(th)_Typ	3.1	V
ID(@VGS=10V)	135	A
RDS(ON)_Typ(@VGS=10V)	2.6	mΩ

Pin Assignment

Schematic Diagram

JMSH0403PG订购信息

Device	Marking	MSL	Form	Package	Reel(pcs)	Per Carton (pcs)
JMSH0403PG-13	SH0403P	1	Tape&Reel	PDFN5x6-8L	5000	50000

Absolute Maximum Ratings (@ $T_{C} = 25^{\circ} C$ unless otherwise specified)

Symbol	Parameter		Value	Unit
VDS	Drain-to-Source Voltage		40	V
VGS	Gate-to-Source Voltage		±20	V
ID	Continuous Drain Current	TC=25°C	135	A
		TC=100°C	86
IDM	Pulsed Drain Current (1)		Refer to Fig.4	A
EAS	Single Pulsed Avalanche Energy (2)		238	mJ
PD	Power Dissipation	TC=25°C	104	W
		TC=100°C	42
TJ, TSTG	Junction & Storage Temperature Range		-55 to 150	°C

JMSH0403PG热特性

Symbol	Parameter	Max	Unit
RθJA	Thermal Resistance, Junction to Ambient(3)	44	°C/W
RθJC	Thermal Resistance, Junction to Case	1.2	°C/W

JMSH0403PG电气特性 $(T_{J} = 25^{\circ} C$ unless otherwise specified)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Off Characteristics
V(BR)DSS	Drain-Source Breakdown Voltage	ID=250μA, VGS=0V	40	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS=32V, VGS=0V	-	-	1.0	μA
IGSS	Gate-Body Leakage Current	VDS=0V, VGS=±20V	-	-	±100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS=VGS, ID=250μA	2.2	3.1	4.0	V
RDS(ON)	Static Drain-Source ON-Resistance(4)	VGS=10V, ID=20A	-	2.6	3.3	mΩ
Dynamic Characteristics
Rg	Gate Resistance	f=1MHz	-	0.8	-	Ω
Ciss	Input Capacitance	VGS=0V, VDS=20V, f=1MHz	1412	1976	2668	pF
Coss	Output Capacitance		856	1198	1618	pF
Crss	Reverse Transfer Capacitance		79	110	149	pF
Qg	Total Gate Charge	VGS=0 to 10VVDS=20V, ID=20A	24	33	45	nC
Qgs	Gate Source Charge		-	10	13	nC
Qgd	Gate Drain("Miller") Charge		-	10	13	nC

Switching Characteristics
td(on)	Turn-On DelayTime	VGS=10V, VDD=20VID=20A, RGEN=3Ω	-	13	-	ns
tr	Turn-On Rise Time		-	24	-	ns
td(off)	Turn-Off DelayTime		-	22	-	ns
tf	Turn-Off Fall Time		-	9	-	ns
Body Diode Characteristics
IS	Maximum Continuous Body Diode Forward Current		-	-	135	A
ISM	Maximum Pulsed Body Diode Forward Current		-	-	541	A
VSD	Body Diode Forward Voltage	VGS=0V, IS=20A	-		1.2	V
trr	Body Diode Reverse Recovery Time	IF=20A, di/dt=100A/us	29	40	55	ns
Qrr	Body Diode Reverse Recovery Charge	IF=20A, di/dt=100A/us	-	37	-	nC

Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. $E_{A S}$ condition: Starting $T_{J} = 25 C$ , $V_{D D} = 20 V$ , $V_{G} = 10 V$ , $R_{G} = 25 o h m$ , $L = 3 m H$ , $I_{A S} = 12.6 A$ , $V_{D D} = 0 V$ during time in avalanche.
3. $R_{θ J A}$ is measured with the device mounted on a 1inch² pad of 2oz copper FR4 PCB.
4. Pulse Test: Pulse Width $\leq 300 μ s$ Duty Cycle $\leq 0.5 %$

典型表现特征

JMSH0403PG典型表现特征图1
Figure 1: Power De-rating

JMSH0403PG典型表现特征图2
Figure 2: Current De-rating

JMSH0403PG典型表现特征图3
Figure 3: Normalized Maximum Transient Thermal Impedance

JMSH0403PG典型表现特征图4
Figure 4: Peak Current Capacity

JMSH0403PG典型表现特征图5
Figure 5: Output Characteristics

JMSH0403PG典型表现特征图6
Figure 6: Typical Transfer Characteristics

JMSH0403PG典型表现特征图7
Figure 7: On-resistance vs. Drain Current

JMSH0403PG典型表现特征图8
Figure 8: Body Diode Characteristics

JMSH0403PG典型表现特征图9
Figure 9: Gate Charge Characteristics

JMSH0403PG典型表现特征图10
Figure 10: Capacitance Characteristics

JMSH0403PG典型表现特征图11
Figure 11: Normalized Breakdown voltage vs. Junction Temperature

JMSH0403PG典型表现特征图12
Figure 12: Normalized on Resistance vs. Junction Temperature

JMSH0403PG典型表现特征图13
Figure 13: Normalized Threshold Voltage vs. Junction Temperature

JMSH0403PG典型表现特征图14
Figure 14: $R_{DS(ON)}$ vs. $V_{GS}$

JMSH0403PG典型表现特征图15
Figure 15: Maximum Safe Operating Area

JMSH0403PG测试电路

JMSH0403PG测试电路图1
Figure 1: Gate Charge Test Circuit & Waveform

JMSH0403PG测试电路图2-1

JMSH0403PG测试电路图2-2
Figure 2: Resistive Switching Test Circuit & Waveform

JMSH0403PG测试电路图3-1

JMSH0403PG测试电路图3-2
Figure 3: Unclamped Inductive Switching Test Circuit& Waveform

JMSH0403PG测试电路图4-1

JMSH0403PG测试电路图4-2
Figure 4: Diode Recovery Test Circuit & Waveform

JMSH0403PG测试电路图5

机械封装数据(PDFN5X6-8L)

JMSH0403PG机械封装数据(PDFN5X6-8L) 图1
Package Outline
Top View

JMSH0403PG机械封装数据(PDFN5X6-8L) 图2
Side View

JMSH0403PG机械封装数据(PDFN5X6-8L) 图3
Bottom View

JMSH0403PG机械封装数据(PDFN5X6-8L) 图4
Front View

备注

Dimension and tolerance per ASME Y 14.5M, 1994
All dimensions in millimeter (angle in degree).
Dimensions D1 and E1 do not include mold flash protrusions or gate burrs.

DIM.	MILLIMETER
DIM.	MIN.	NUM.	MAX.
A	0.9	1	1.15
b	0.31	0.41	0.51
C	0.24	0.32	0.4
D	5	5.2	5.4
D1	4.95	5.05	5.15
D2	4	4.1	4.2
E	6.05	6.15	6.25
E1	5.5	5.6	5.7
E2	3.42	3.53	3.63
e	1.2T8SC
H	0.6	0.7	0.8
L	0.5	0.7	0.8
K	1.23 REF
0			10

JMSH0403PG尺寸
Recommended Soldering Footprint
DIMENSIONS: MILLIMETERS

JMSH0403PG规格参数
	Type	中压MOSFET
	RoHS
	制造商	JJM
	类型	N
	VDS_Max/V	40
	ID_Max /A	135
	VGS(th)Typ/V	3.1
	RDS(ON)Typ (mΩ)@VGS 10V	2.6
	RDS(ON)Max (mΩ)@VGS 10V	3.3
	RDS(ON)Typ (mΩ)@VGS 4.5V
	RDS(ON)Max (mΩ)@VGS 4.5V
	VGS_Max/V	±20

JMSH0403PG

JMSH0403PG规格参数