JJM JMSL0620PGEQ|JMSL0620PGEQ规格书|JMSL0620PGEQ参数-汽车MOSFET-MOSFET-深圳维佰益科技有限公司

JMSL0620PGEQ详情

60V, 48A, 17mΩ N-channel Power SGT MOSFET

JMSL0620PGEQ特点

超低导通电阻, $R_{D S (O N)}$
低栅极电荷
100% UIS测试
100% ΔVds测试
无卤素;符合RoHS标准的
AEC-Q101合格
静电保护，HBM>2KV

JMSL0620PGEQ应用

负载开关
PWM应用
通用汽车应用

PDFN5X6-8L

Pin Assignment

产品摘要

Parameters	Value	Unit
VDSS	60	V
VGS(th)_Typ	1.7	V
ID(@VGS=10V)	48	A
RDS(ON)_Typ(@VGS=10V)	12	mΩ
RDS(ON)_Typ(@VGS=4.5V)	17	mΩ

示意图

JMSL0620PGEQ订购信息

Device	Marking	MSL	Form	Package	Reel(pcs)	Per Carton (pcs)
JMSL0620PGEQ-13	L0620Q	1	Tape&Reel	PDFN5x6-8L	5000	50000

Absolute Maximum Ratings (@ $T_{C} = 25^{\circ} C$ unless otherwise specified)

Symbol	Parameter		Value	Unit
VDS	Drain-to-Source Voltage		60	V
VGS	Gate-to-Source Voltage		±20	V
ID	Continuous Drain Current	TC=25°C	48	A
		TC=100°C	34
IDM	Pulsed Drain Current (1)		Refer to Fig.4	A
EAS	Single Pulsed Avalanche Energy (2)		36	mJ
PD	Power Dissipation	TC=25°C	71	W
		TC=100°C	36
TJ, TSTG	Junction & Storage Temperature Range		-55 to 175	°C

热特性

Symbol	Parameter	Max	Unit
RθJA	Thermal Resistance, Junction to Ambient(3)	47	°C/W
RθJC	Thermal Resistance, Junction to Case	2.1	°C/W

电气特性 $(T_{J} = 25^{\circ} C$ unless otherwise specified)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Off Characteristics
V(BR)DSS	Drain-Source Breakdown Voltage	ID=250μA, VGS=0V	60	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS=48V, VGS=0V	-	-	1.0	μA
IGSS	Gate-Body Leakage Current	VDS=0V, VGS=±20V	-	-	±10	μA
特征
VGS(th)	Gate Threshold Voltage	VDS=VGS, ID=250μA	1.2	1.7	2.2	V
RDS(ON)	Static Drain-Source ON-Resistance(4)	VGS=10V, ID=20A	-	12	16	mΩ
RDS(ON)	Static Drain-Source ON-Resistance(4)	VGS=4.5V, ID=15A	-	17	22	mΩ
动态特性
Rg	Gate Resistance	f=1MHz	-	2.1	-	Ω
Ciss	Input Capacitance	VGS=0V, VDS=30V, f=1MHz	424	593	800	pF
Coss	Output Capacitance		205	287	388	pF
Crss	Reverse Transfer Capacitance		8	18	40	pF
Qg	Total Gate Charge	VGS=0 to 10VVDS=30V, ID=20A	-	11	-	nC
Qgs	Gate Source Charge		-	2.3	-	nC
Qgd	Gate Drain("Miller") Charge		-	2.4	-	nC

切换特性
td(on)	Turn-On DelayTime	VGS=10V, VDD=30VID=20A, RGEN=3Ω	-	5.5	-	ns
tr	Turn-On Rise Time		-	29	-	ns
td(off)	Turn-Off DelayTime		-	15	-	ns
tf	Turn-Off Fall Time		-	3.4	-	ns
体二极管特性
IS	Maximum Continuous Body Diode Forward Current		-	-	48	A
ISM	Maximum Pulsed Body Diode Forward Current		-	-	192	A
VSD	Body Diode Forward Voltage	VGS=0V, IS=20A	-		1.2	V
trr	Body Diode Reverse Recovery Time	IF=20A, di/dt=100A/us	13	19	25	ns
Qrr	Body Diode Reverse Recovery Charge	IF=20A, di/dt=100A/us	-	8.8	-	nC

Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. $E_{A S}$ condition: Starting $T_{J} = 25 C$ , $V_{D D} = 30 V$ , $V_{G S} = 10 V$ , $R_{G} = 25 o h m$ , $L = 3 m H$ , $I_{A S} = 4.9 A$ , $V_{D D} = 0 V$ during time in avalanche.
3. $R_{θ J A}$ is measured with the device mounted on a 1inch² pad of 2oz copper FR4 PCB.
4. Pulse Test: Pulse Width $\leq 300 μ s$ Duty Cycle $\leq 0.5 %$

典型表现特征

Figure 1: Power De-rating

JMSL0620PGEQ Power De-rating
Figure 2: Current De-rating

JMSL0620PGEQ Current De-rating
Figure 3: Normalized Maximum Transient Thermal Impedance

JMSL0620PGEQ Normalized Maximum Transient Thermal Impedance
Figure 4: Peak Current Capacity

JMSL0620PGEQ Peak Current Capacity
Figure 5: Output Characteristics

JMSL0620PGEQ Output Characteristics
Figure 6: Typical Transfer Characteristics

JMSL0620PGEQ Typical Transfer Characteristics
Figure 7: On-resistance vs. Drain Current

JMSL0620PGEQ On-resistance vs. Drain Current
Figure 8: Body Diode Characteristics

JMSL0620PGEQ Body Diode Characteristics
Figure 9: Gate Charge Characteristics

JMSL0620PGEQ Gate Charge Characteristics
Figure 10: Capacitance Characteristics

JMSL0620PGEQ Capacitance Characteristics
Figure 11: Normalized Breakdown voltage vs. Junction Temperature

JMSL0620PGEQ Normalized Breakdown voltage vs. Junction Temperature
Figure 12: Normalized on Resistance vs. Junction Temperature

JMSL0620PGEQ Normalized on Resistance vs. Junction Temperature
Figure 13: Normalized Threshold Voltage vs. Junction Temperature

JMSL0620PGEQ Normalized Threshold Voltage vs. Junction Temperature
Figure 14: $R_{DS(ON)}$ vs. $V_{GS}$

JMSL0620PGEQ 𝑅 DS(ON) vs. 𝑉 GS
Figure 15: Maximum Safe Operating Area

JMSL0620PGEQ测试电路

Figure 1: Gate Charge Test Circuit & Waveform

Figure 2: Resistive Switching Test Circuit & Waveform

Figure 3: Unclamped Inductive Switching Test Circuit& Waveform

Figure 4: Diode Recovery Test Circuit & Waveform

封装机械参数(PDFN5X6-8L)

Package Outline
Top View

Side View

Bottom View

DIM.	MILLIMETER
DIM.	MIN.	NOM.	MAX.
A	0.9	1	1.15
b	0.31	0.41	0.51
C	0.24	0.32	0.4
D	5	5.2	5.4
D1	4.95	5.05	5.15
D2	4	4.1	4.2
E	6.05	6.15	6.25
E1	5.5	5.6	5.7
E2	3.42	3.53	3.63
e	1.27ESC
H	0.6	0.7	0.8
L	0.5	0.7	0.8
K	1.23 REF
0			10

正面视图

NOTES:

Dimension and tolerance per ASME Y14.5M, 1994.
All dimensions in millimeter (angle in degree).
Dimensions D1 and E1 do not include mold flash protrusions or gate burrs.

Recommended Soldering Footprint
DIMENSIONS:MILLIMETERS

JMSL0620PGEQ规格参数
	Type	汽车MOSFET
	RoHS
	制造商	JJM
	类型	N
	VDS_Max/V	60
	ID_Max /A	48
	VGS(th)Typ/V	1.7
	RDS(ON)Typ (mΩ)@ VGS 10V	12
	RDS(ON)Max (mΩ)@ VGS 10V	16
	VGS_Max/V	±20

JMSL0620PGEQ

JMSL0620PGEQ规格参数