JJM JMSH1101MTL|JMSH1101MTL规格书|JMSH1101MTL参数-中压MOSFET-MOSFET-深圳维佰益科技有限公司

JMSH1101MTL详情

110伏，430安培，1.1mΩ N通道功率 SGT MOSFET JMSH1101MTL

JMSH1101MTL特点

非常好 $R_{D S (O N)}$ 低栅极电荷
100%UIS测试
100%ΔVds测试
无卤素;符合RoHS

JMSH1101MTL应用

负载开关
PWM应用
电源管理

PowerJE®10x12

JMSH1101MTL 正面

JMSH1101MTL 背面

产品摘要

Parameters	Value	Unit
VDSS	110	V
VGS(th)_Typ	2.6	V
ID(@VGS=10V)	430	A
RDS(ON)_Typ(@VGS=10V)	1.1	mΩ

JMSH1101MTL 引脚分配
Pin Assignment

JMSH1101MTL 原理图
Schematic Diagram

JMSH1101MTL订购信息

Device	Marking	MSL	Form	Package	Reel(pcs)	Per Carton (pcs)
JMSH1101MTL-13	SH1101M	1	Tape&Reel	PowerJE®10x12	2000	10000

绝对最大额定值 (@ $T_{C} = 25^{\circ} C$ unless otherwise specified)

Symbol	Parameter		Value	Unit
VDS	Drain-to-Source Voltage		110	V
VGS	Gate-to-Source Voltage		±20	V
ID	Continuous Drain Current	TC=25°C	430	A
		TC=100°C	272
IDM	Pulsed Drain Current (1)		Refer to Fig.4	A
EAS	Single Pulsed Avalanche Energy (2)		1987	mJ
PD	Power Dissipation	TC=25°C	500	W
		TC=100°C	200
TJ, TSTG	Junction & Storage Temperature Range		-55 to 150	°C

热特性

Symbol	Parameter	Max	Unit
RθJA	Thermal Resistance, Junction to Ambient(3)	34	°C/W
RθJC	Thermal Resistance, Junction to Case	0.25	°C/W

电气特性 $(T_{J} = 25^{\circ} C$ unless otherwise specified)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Off Characteristics
V(BR)DSS	Drain-Source Breakdown Voltage	ID=250μA, VGS=0V	110	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS=88V, VGS=0V	-	-	1.0	μA
IGSS	Gate-Body Leakage Current	VDS=0V, VGS=±20V	-	-	±100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS=VGS, ID=250μA	1.8	2.6	3.4	V
RDS(ON)	Static Drain-Source ON-Resistance(4)	VGS=10V, ID=20A	-	1.1	1.6	mΩ
Dynamic Characteristics
Rg	Gate Resistance	f=1MHz	-	4.4	-	Ω
Ciss	Input Capacitance	VGS=0V, VDS=55V, f=1MHz	8699	12179	17050	pF
Coss	Output Capacitance		2840	3976	5567	pF
Crss	Reverse Transfer Capacitance		46	64	128	pF
Qg	Total Gate Charge	VGS=0 to 10VVDS=50V, ID=20A	134	188	254	nC
Qgs	Gate Source Charge		40	56	75	nC
Qgd	Gate Drain("Miller") Charge		31	44	59	nC

Switching Characteristics
td(on)	Turn-On DelayTime	VGS=10V, VDD=50VID=20A, RGEN=3Ω	-	34	-	ns
tr	Turn-On Rise Time		-	59	-	ns
td(off)	Turn-Off DelayTime		-	163	-	ns
tf	Turn-Off Fall Time		-	96	-	ns
Body Diode Characteristics
IS	Maximum Continuous Body Diode Forward Current		-	-	430	A
ISM	Maximum Pulsed Body Diode Forward Current		-	-	1719	A
VSD	Body Diode Forward Voltage	VGS=0V, IS=20A	-		1.2	V
trr	Body Diode Reverse Recovery Time	IF=20A, di/dt=100A/us	87	122	165	ns
Qrr	Body Diode Reverse Recovery Charge	IF=20A, di/dt=100A/us	-	342	-	nC

Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. $E_{A S}$ condition: Starting $T_{J} = 25 C$ , $V_{D D} = 55 V$ , $V_{G} = 10 V$ , $R_{G} = 25 o h m$ , $L = 3 m H$ , $I_{A S} = 36.4 A$ , $V_{D D} = 0 V$ during time in avalanche.
3. $R_{θ J A}$ is measured with the device mounted on a 1inch² pad of 2oz copper FR4 PCB.
4. Pulse Test: Pulse Width $\leq 300 μ s$ Duty Cycle $\leq 0.5 %$

JMSH1101MTL典型性能特性

JMSH1101MTL典型性能特性图1
Figure 1: Power De-rating

JMSH1101MTL典型性能特性图2
Figure 2: Current De-rating

JMSH1101MTL典型性能特性图3
Figure 3: Normalized Maximum Transient Thermal Impedance

JMSH1101MTL典型性能特性图4
Figure 4: Peak Current Capacity

JMSH1101MTL典型性能特性图5
Figure 5: Output Characteristics

JMSH1101MTL典型性能特性图6
Figure 6: Typical Transfer Characteristics

JMSH1101MTL典型性能特性图7
Figure 7: On-resistance vs. Drain Current

JMSH1101MTL典型性能特性图8
Figure 8: Body Diode Characteristics

JMSH1101MTL典型性能特性图9
Figure 9: Gate Charge Characteristics

JMSH1101MTL典型性能特性图10
Figure 10: Capacitance Characteristics

JMSH1101MTL典型性能特性图11
Figure 11: Normalized Breakdown voltage vs. Junction Temperature

JMSH1101MTL典型性能特性图12
Figure 12: Normalized on Resistance vs. Junction Temperature

JMSH1101MTL典型性能特性图13
Figure 13: Normalized Threshold Voltage vs. Junction Temperature

JMSH1101MTL典型性能特性图14
Figure 14: $R_{DS(ON)}$ vs. $V_{GS}$

JMSH1101MTL典型性能特性图15
Figure 15: Maximum Safe Operating Area

JMSH1101MTL测试电路

JMSH1101MTL测试电路图1
Figure 1: Gate Charge Test Circuit & Waveform

JMSH1101MTL测试电路图2

JMSH1101MTL测试电路图3
Figure 2: Resistive Switching Test Circuit & Waveform

JMSH1101MTL测试电路图4

JMSH1101MTL测试电路图5
Figure 3: Unclamped Inductive Switching Test Circuit& Waveform

JMSH1101MTL测试电路图6

JMSH1101MTL测试电路图7
Figure 4: Diode Recovery Test Circuit & Waveform

JMSH1101MTL测试电路图8

JMSH1101MTL封装外形尺寸数据(PowerJE®10x12)

Package Outline
Package Outlines
Top View
JMSH1101MTL封装外形尺寸数据图1
1. Dimension and tolerance per ASME Y14.5M, 1994.

Side View
NOTES:
JMSH1101MTL封装外形尺寸数据图2
2. All dimensions in millimeter.

JMSH1101MTL封装外形尺寸数据图3
Bottom View

DIM.	MILLIMETER
DIM.	MIN	NOM	MAX
A	2.20	2.30	2.50
b	0.70	0.80	0.90
bl	9.70	9.80	9.90
b2	0.42	0.46	0.50
C	0.40	0.50	0.65
D	10.28	10.38	10.58
D2	3.30
E	9.70	9.90	10.10
E1	7.80
E4	8.80
E5	9.20
e	1.20(BSC)
H	11.48	11.68	11.88
HI	6.55	6.75	6.85
H2	7.30
H3	3.20
H4	3.80
K1	4.18
L	1.70	1.90	2.10
L1	0.70
L2	0.60
L4	1.00	1.15	1.30

JMSH1101MTL封装外形尺寸数据图4
Front View

Recommended Soldering Footprint
DIMENSIONS: MILITIMETERS
JMSH1101MTL封装外形尺寸数据图5

JMSH1101MTL规格参数
	Type	中压MOSFET
	RoHS
	制造商	JJM
	类型	N
	VDS_Max/V	110
	ID_Max /A	430
	VGS(th)Typ/V	2.6
	RDS(ON)Typ (mΩ)@VGS 10V	1.1
	RDS(ON)Max (mΩ)@VGS 10V	1.6
	RDS(ON)Typ (mΩ)@VGS 4.5V
	RDS(ON)Max (mΩ)@VGS 4.5V
	VGS_Max/V	±20

JMSH1101MTL

JMSH1101MTL规格参数