JMSH0606PGD

JMSH0606PGD详情

60伏，88安培，4.1mΩ 双N通道功率SGT MOSFET JMSH0606PGD

JMSH0606PGD特点

• 非常好$R_{DS(ON)}$以及低栅极电荷
• 100%通过UIS测试
• 检测率为100%的ΔVds
• 无卤素;符合RoHS

JMSH0606PGD应用

• 负载开关
• PWM应用
• 电源管理

产品摘要

Parameters	Value	Unit
VDSS	60	V
VGS(th)_Typ	2.7	V
ID(@VGS=10V)	88	A
RDS(ON)_Typ(@VGS=10V	4.1	mΩ

RoHS

PDFN5X6-8L-D

Pin Assignment

Schematic Diagram

JMSH0606PGD订购信息

Device	Marking	MSL	Form	Package	Reel(pcs)	Per Carton (pcs)
JMSH0606PGD-13	H0606PD	1	Tape&Reel	PDFN5x6-8L-D	5000	50000

绝对最大额定值 (@ ${\mathrm{T}}_{\mathrm{C}}={25}^{\circ }\mathrm{C}$ unless otherwise specified)

Symbol	Parameter		Value	Unit
VDS	Drain-to-Source Voltage		60	V
VGS	Gate-to-Source Voltage		±20	V
ID	Continuous Drain Current	TC=25°C	88	A
		TC=100°C	56
IDM	Pulsed Drain Current (1)		Refer to Fig.4	A
EAS	Single Pulsed Avalanche Energy (2)		212	mJ
PD	Power Dissipation	TC=25°C	67	W
		TC=100°C	27
TJ, TSTG	Junction & Storage Temperature Range		-55 to 150	°C

热特性

Symbol	Parameter	Max	Unit
RθJA	Thermal Resistance, Junction to Ambient(3)	55	°C/W
RθJC	Thermal Resistance, Junction to Case	1.9

电气特性 ( $T_J={25}^{\circ }C$ unless otherwise specified)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Off Characteristics
V(BR)DSS	Drain-Source Breakdown Voltage	ID=250μA, VGS=0V	60	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS=48V, VGS=0V	-	-	1.0	μA
IGSS	Gate-Body Leakage Current	VDS=0V, VGS=±20V	-	-	±100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS=VGS, ID=250μA	1.9	2.7	3.5	V
RDS(ON)	Static Drain-Source ON-Resistance(4)	VGS=10V, ID=15A	-	4.1	5.4	mΩ
Dynamic Characteristics
Rg	Gate Resistance	f=1MHz	-	1.8	-	Ω
Ciss	Input Capacitance	VGS=0V, VDS=30V, f=1MHz	1510	2113	2853	pF
Coss	Output Capacitance		771	1079	1457	pF
Crss	Reverse Transfer Capacitance		30	42	56	pF
Qg	Total Gate Charge	VGS=0 to 10VVDS=30V, ID=15A	23	33	44	nC
Qgs	Gate Source Charge		-	10	-	nC
Qgd	Gate Drain("Miller") Charge		-	7.9	-	nC
Switching Characteristics
td(on)	Turn-On DelayTime	VGS=10V, VDD=30VID=15A, RGEN=3Ω	-	12	-	ns
tr	Turn-On Rise Time		-	19	-	ns
td(off)	Turn-Off DelayTime		-	24	-	ns
tf	Turn-Off Fall Time		-	9	-	ns
Body Diode Characteristics
IS	Maximum Continuous Body Diode Forward Current		-	-	88	A
ISM	Maximum Pulsed Body Diode Forward Current		-	-	352	A
VSD	Body Diode Forward Voltage	VGS=0V, IS=15A	-		1.2	V
trr	Body Diode Reverse Recovery Time	IF=15A, di/dt=100A/us	33	46	62	ns
Qrr	Body Diode Reverse Recovery Charge		-	47	-	nC

Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.

2. $E_{AS}$ condition: Starting $T_J=25C$ , $V_{DD}=30V$ , $V_{GS}=10V$ , $R_G=25ohm$ , $L=3mH$ , $I_{AS}=11.9A$ , $V_{DD}=0V$ during time in avalanche.

3. $R_{\theta \mathrm{J}\mathrm{A}}$ is measured with the device mounted on a 1inch² pad of 2oz copper FR4 PCB.

4. Pulse Test: Pulse Width $\le 300\mu s$ Duty Cycle $\le 0.5\%$

JMSH0606PGD典型性能特性

Figure 1: Power De-rating

Figure 2: Current De-rating

Figure 3: Normalized Maximum Transient Thermal Impedance

Figure 4: Peak Current Capacity

Figure 5: Output Characteristics

Figure 6: Typical Transfer Characteristics

Figure 7: On-resistance vs. Drain Current

Figure 8: Body Diode Characteristics

Figure 9: Gate Charge Characteristics

Figure 10: Capacitance Characteristics

Figure 11: Normalized Breakdown voltage vs. Junction Temperature

Figure 12: Normalized on Resistance vs. Junction Temperature

Figure 13: Normalized Threshold Voltage vs. Junction Temperature

Figure 14: $R_{DS(ON)}$ vs. $V_{GS}$

Figure 15: Maximum Safe Operating Area

JMSH0606PGD 测试电路

Figure 1: Gate Charge Test Circuit & Waveform

Figure 2: Resistive Switching Test Circuit & Waveform

Figure 3: Unclamped Inductive Switching Test Circuit& Waveform

Figure 4: Diode Recovery Test Circuit & Waveform

JMSH0606PGD封装机械数据(PDFN5X6-8L-D)

Package Outline

Top View

Side View

Bottom View

Front View

NOTES

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. ALL DIMNESIONS IN MILLIMETER (ANGLE IN DEGREE)

3 DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH

DIM.	MILLIMETER
	MIN.	NOM.	MAX.
A	0.90	1.00	1.10
A1	0.00	-	0.10
b	0.31	0.41	0.51
b1	0.15	0.25	0.35
c	0.23	-	0.33
D	4.95	5.05	5.15
D1	4.00	4.10	4.20
D2	0.50	0.60	0.70
E	6.05	6.15	6.25
E1	5.50	5.60	5.70
E2	3.31	3.41	3.51
e	1.27BSC
H	0.60	0.70	0.80
L	0.50	0.70	0.80
L1	-	-	0.125
a	-	-	12°

Recommended Soldering Footprint

DIMENSIONS:MILLIMETERS